SSM6K208FE Datasheet, PDF (2/7 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM6K208FE
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Note 2: Pulse test
Symbol
Test Conditions
Min Typ. Max Unit
V _{(BR) DSS} I_D = 1 mA, V_GS = 0 V
V _{(BR) DSX} I_D = 1 mA, V_GS = –12 V
30
⎯
⎯
V
18
⎯
⎯
I_DSS
V_DS = 30 V, V_GS = 0 V
⎯
⎯
1
μA
I_GSS
V_GS = ±12 V, V_DS = 0 V
⎯
⎯
±1
μA
V_th
V_DS = 3 V, I_D = 1 mA
0.4
⎯
1.0
V
⏐Y_fs⏐ V_DS = 3 V, I_D = 1.0 A
(Note 2)
2
3.9
⎯
S
I_D = 1.0 A, V_GS = 4 V
(Note 2)
⎯
103 133
R_{DS (ON)} I_D = 0.8 A, V_GS = 2.5 V
(Note 2)
⎯
125 177 mΩ
I_D = 0.5 A, V_GS = 1.8 V
(Note 2)
⎯
165 296
C_iss
⎯
123
⎯
C_oss
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
⎯
43
⎯
pF
C_rss
⎯
18
⎯
Q_g
⎯
1.9
⎯
Q_gs
V_DS = 15V, I_D = 1.9 A, V_GS = 4 V
⎯
1.1
⎯
nC
Q_gd
⎯
0.8
⎯
t_on
V_DD = 15 V, I_D = 1.0 A,
t_off
V_GS = 0 to 2.5 V, R_G = 4.7 Ω
⎯
9.2
⎯
ns
⎯
6.4
⎯
V_DSF I_D = –1.9 A, V_GS = 0 V
(Note 2) ⎯ –0.83 –1.2
V
2
2014-03-01