SSM6K208FE Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM6K208FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K208FE
○ High-Speed Switching Applications
○ Power Management Switch Applications
Unit: mm
• 1.8V drive
• Low ON-resistance:
R_on = 296 mΩ (max) (@V_GS = 1.8 V)
R_on = 177 mΩ (max) (@V_GS = 2.5 V)
R_on = 133 mΩ (max) (@V_GS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
V_DSS
30
V
V_GSS
± 12
V
I_D
1.9
A
I_DP
3.8
P_D (Note 1)
500
mW
T_ch
150
°C
T_stg
−55 to 150
°C
ES6
1,2,5,6: Drain
3 : Gate
4 : Source
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2N1A
reliability significantly even if the operating conditions (i.e.
Weight: 3mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 645 mm² )
Start of commercial production
2008-01
1
2014-03-01