SSM6K08FU_07 Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – High Speed Switching Applications

Safe Operating Area
10
ID max (pulse) *
3
1 ms
10 ms
1
ID max
(continuous)
0.3
DC operation
Ta = 25°C
0.1
100 ms
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t
0.03
2
Cu pad: 0.32 mm × 6) Figure 1
0.01
0.003
* Single non-repetitive
pulsed Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.001
0.1
0.3
1
3
10
30
100
Drain-Source voltage VDS (V)
0.4 mm
25.4 mm × 25.4 mm × 1.6 t,
Cu Pad: 0.32 mm² × 6
SSM6K08FU
Figure 1
5
2007-11-01