SSM6K08FU_07 Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – High Speed Switching Applications

V_th – Ta
2
VDS = 3 V
ID = 0.1 mA
Common Source
1.5
1
0.5
0
−25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
SSM6K08FU
10
VDS = 3 V
3 ^{Common Source}
Ta = 25°C
1
|Y_fs| – I_D
0.3
0.1
0.03
0.01
1
3
10 30 100 300 1000 3000 10000
Drain current ID (mA)
1000
300
100
Switching Time
Common Source
VDD = 10 V
VGS = 0~2.5 V
Rg = 4.7 Ω
Ta = 25°C
30
ton
10
tr
3
toff
tf
1
10
30
100
30
1000 300 10000
Drain current ID (mA)
1000
500
C – V_DS
Ciss
100
50
Coss
Crss
Common Source
10 VGS = 0
f = 1 MHz
Ta = 25°C
5
0.1
0.5 1
5 10
50 100
Drain-Source voltage VDS (V)
Dynamic Input Characteristic
10
Common Source
VDD = 16 V
8 ^{ID= 1.6 A}
Ta = 25°C
6
4
2
0
0
2
4
6
8
Total gate charge Qg (nC)
P_D – Ta
350
Mounted on FR4 board
300
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu pad: 0.32 mm × 6)
250
Figure 1
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
4
2007-11-01