SSM6K08FU_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM6K08FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
SSM6K08FU
High Speed Switching Applications
Unit: mm
• Small package
• Low on resistance: R_on = 105 mΩ (max) (@V_GS = 4 V)
R_on = 140 mΩ (max) (@V_GS = 2.5 V)
• High-speed switching: t_on = 16 ns (typ.)
t_off = 15 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
20
V
Gate-Source voltage
V_GSS
±12
V
Drain current
DC
I_D
Pulse
I_DP
1.6
A
3.2
Drain power dissipation
P_D
300
mW
(Note 1)
Channel temperature
Storage temperature range
T_ch
150
°C
JEDEC
―
T_stg
−55~150
°C
JEITA
―
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2J1D
Weight: 6.8 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm² × 6) Figure 1.
Marking
Equivalent Circuit (top view)
654
654
KDC
123
Handling Precaution
123
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01