SSM6K08FU_07 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – High Speed Switching Applications

Electrical Characteristics (Ta = 25°C)
SSM6K08FU
Characteristics
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Note2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ±12 V, V_DS = 0
⎯
⎯
±1
μA
V _{(BR) DSS}
V _{(BR) DSX}
I_D = 1 mA, V_GS = 0
I_D = 1 mA, V_GS = −12 V
20
⎯
⎯
V
12
⎯
⎯
I_DSS
V_DS = 20 V, V_GS = 0
⎯
⎯
1
μA
V_th
V_DS = 3 V, I_D = 0.1 mA
0.5
⎯
1.2
V
⏐Y_fs⏐
V_DS = 3 V, I_D = 0.8 A
(Note2) 2.0
⎯
⎯
S
I_D = 0.8 A, V_GS = 4 V
(Note2) ⎯
77 105
R_{DS (ON)} I_D = 0.8 A, V_GS = 2.5 V
(Note2) ⎯
100 140 mΩ
I_D = 0.8 A, V_GS = 2.0 V
(Note2) ⎯ 125 210
C_iss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯ 306 ⎯
pF
C_rss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
44
⎯
pF
C_oss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
74
⎯
pF
t_on
V_DD = 10 V, I_D = 0.8 A,
t_off
V_GS = 0~2.5 V, R_G = 4.7 Ω
⎯
16
⎯
ns
⎯
15
⎯
Switching Time Test Circuit
(a) Test Circuit
(b) V_IN
2.5 V
IN
0
10 μs
V_DD = 10 V
R_G = 4.7 Ω
D.U. ^<= 1%
V_IN: t_r, t_f < 5 ns
Common Source
Ta = 25°C
OUT
V_DD
(c) V_OUT
2.5 V
0V
V_DD
V_{DS (ON)}
10%
90%
10%
90%
t_r
t_f
t_on
t_off
Precaution
V_th can be expressed as voltage between gate and source when low operating current value is I_D = 100 μA for this
product. For normal switching operation, V_{GS (on)} requires higher voltage than V_th and V_{GS (off)} requires lower
voltage than V_th.
(Relationship can be established as follows: V_{GS (off)} < V_th < V_{GS (on)} )
Please take this into consideration for using the device.
2
2007-11-01