SSM6K08FU_07 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – High Speed Switching Applications

I_D – V_DS
4
Common Source
4 V 2.5 V 2.0 V
3
Ta = 25°C
1.7 V
2
1.6 V
1
1.5 V
1.4 V
VGS = 1.3 V
0
0
0.5
1
1.5
2
Drain-Source voltage VDS (V)
SSM6K08FU
10000
1000
VDS = 3 V
Common Source
I_D – V_GS
Ta = 100°C
100
25°C
10
−25°C
1
0.1
0.01
0
0.4
0.8
1.2
1.6
2
Gate-Source voltage VGS (V)
R_{DS (ON)} – I_D
200
Common Source
Ta = 25°C
160
VGS = 2.0 V
120
2.5 V
4.0 V
80
40
0
0
1
2
3
Drain current ID (A)
400
ID = 0.8 A
R_{DS (ON)} – Ta
Common Source
300
200
VGS = 2.0 V
2.5 V
4V
100
0
−25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
400
ID = 0.8 A
R_{DS (ON)} – V_GS
Common Source
300
200
25°C
100
−25°C
Ta = 100°C
0
0
2
4
6
8
10
12
Gate-Source voltage VGS (V)
4
Common Source
I_DR – V_DS
VGS = 0
Ta = 25°C
3
G
D
I_DR
S
2
1
0
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2
Drain-Source voltage VDS (V)
3
2007-11-01