SSM6J214FE Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

r_th – t_w
1000
100
10
1
0.001
Single pulse
Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )
0.01
0.1
1
10
100
1000
Pulse Width t_w (s)
SSM6J214FE
P_D – Ta
600
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm ,
Cu Pad : 645 mm²)
500
400
300
200
100
0
0
50
100
150
Ambient temperature Ta (°C)
5
2014-03-01