SSM6J214FE Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

V_th – Ta
-1.0
Common Source
VDS = -3 V
ID = -1 mA
-0.8
-0.6
-0.4
-0.2
0
−50
0
50
100
150
Ambient temperature Ta (°C)
10000
C – V_DS
3000
1000
Ciss
300
100
Common Source
30 Ta = 25 °C
f = 1 MHz
VGS = 0 V
10
-0.1
-1
Coss
Crss
-10
-100
Drain–source voltage V_DS (V)
SSM6J214FE
100
Common Source
VDS = -3 V
30 _{Ta = 25 °C}
Pulse test
10
|Y_fs| – I_D
3.0
1.0
0.3
0.1
-0.01
-0.1
-1
-10
Drain current I_D (A)
Dynamic Input Characteristic
-12
-10
VDD = -15 V
-8
VDD = -24 V
-6
-4
-2
Common Source
ID = -3.6 A
Ta = 25 °C
00
10
20
30
Total Gate Charge Qg (nC)
10000
toff
tf
1000
t – I_D
Common Source
VDD = -15 V
VGS = 0 to -4.5 V
Ta = 25 °C
RG = 10Ω
100
10 ^ton
tr
1
-0.001
-0.01
-0.1
-1
-10
Drain current I_D (A)
I_DR – V_DS
10
Common Source
VGS = 0 V
Pulse test
D
1
I_DR
G
S
0.1
0.01
0.001
0
25 °C
100 °C
−25 °C
0.2
0.4
0.6
0.8
1.0
1.2
Drain–source voltage V_DS (V)
4
2014-03-01