SSM6J214FE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

SSM6J214FE
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM6J214FE
○ Power Management Switch Applications
• 1.8 V drive
• Low ON-resistance: R_DS(ON) = 149.6 mΩ (max) (@V_GS = -1.8 V)
R_DS(ON) = 77.6 mΩ (max) (@V_GS = -2.5 V)
R_DS(ON) = 57.0 mΩ (max) (@V_GS = -4.5 V)
R_DS(ON) = 50.0 mΩ (max) (@_VGS = -10 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
V_DSS
-30
V
V_GSS
± 12
V
I_D (Note 1)
-3.6
A
I_DP (Note 1)
-7.2
P_D (Note 2)
500
mW
t = 10s
700
T_ch
150
°C
T_stg
−55 to 150
°C
ES6
1,2,5,6 ： Drain
3
： Gate
4
： Source
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2N1J
reliability significantly even if the operating conditions (i.e.
Weight: 3 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Marking (Top View)
654
PT
123
Equivalent Circuit
65 4
1 23
1
Start of commercial production
2011-01
2014-03-01