SSM6J214FE Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

I_D – V_DS
-8
VGS =-10 V ^{-4.5 V} -2.5 V
-6
-4
-1.8 V
-2
Common Source
Ta = 25 °C
Pulse test
0
0
-0.2
-0.4
-0.6
-0.8
-1
Drain–source voltage V_DS (V)
SSM6J214FE
-10
Common Source
VDS = -3 V
-1 Pulse test
I_D – V_GS
-0.1
-0.01
-0.001
Ta = 100 °C
25 °C
−25 °C
-0.0001
0
-0.5
-1.0
-1.5
-2.0
Gate–source voltage V_GS (V)
R_{DS (ON)} – V_GS
200
ID = -0.5 A
Common Source
Pulse test
150
100
Ta = 100 °C
25 °C
50
− 25 °C
0
0
-2
-4
-6
-8
-10
-12
Gate–source voltage V_GS (V)
R_{DS (ON)} – V_GS
200
ID = -2.5 A
Common Source
Pulse test
150
100
50
0
0
Ta = 100 °C
25 °C
− 25 °C
-2
-4
-6
-8
-10
-12
Gate–source voltage V_GS (V)
R_{DS (ON)} – I_D
150
Common Source
Ta = 25 °C
Pulse test
-1.8 V
100
-2.5 V
50
-4.5 V
VGS = -10 V
0
0
-2.0
-4.0
-6.0
-8.0
Drain current I_D (A)
R_{DS (ON)} – Ta
200
Common Source
Pulse test
150
-2.5 A / -2.5 V
ID = -0.5 A / VGS = -1.8 V
100
-3.0 A / -4.5 V
50
-3.0 A / -10 V
0
−50
0
50
100
150
Ambient temperature Ta (°C)
3
2014-03-01