SSM3K324R Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

1000
100
R_th – t_w
b
a
10
1
0.001
Single pulse
a. Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
b. Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.72 mm²Ã—3)
0.01
0.1
1
10
100
1000
Pulse width tw (s)
SSM3K324R
P_D – T_a
1600
a: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm²)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.72 mm² ×3)
1200
a
800
b
400
0
-40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
5
2012-12-21