SSM3K324R Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

V_th – T_a
1.0
Common Source
VDS = 3 V
ID = 1 mA
0.8
0.6
0.4
0.2
0
−50
0
50
100
150
Ambient temperature T_a (°C)
1000
500
300
C – V_DS
Ciss
100
50
30
10
0.1
Common Source
Ta = 25 °C
f = 1 MHz
VGS = 0 V
1
Coss
Crss
10
100
Drain–source voltage V_DS (V)
SSM3K324R
100
Common Source
VDS = 3 V
30 _{Ta = 25 °C}
Pulse test
10
|Y_fs| – I_D
3.0
1.0
0.3
0.1
0.01
0.1
1
10
100
Drain current I_D (A)
Dynamic Input Characteristic
10
8
VDD = 10 V
6
VDD = 16 V
4
2
Common Source
ID = 2.4 A
Ta = 25 °C
00
1
2
3
4
5
Total Gate Charge Q_g (nC)
1000
toff
100 ^tf
t – I_D
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25 °C
RG = 10 Ω
10 ton
tr
1
0.01
0.1
1
10
Drain current I_D (A)
I_DR – V_DS
10
1
0.1
Ta = 100 °C
0.01
0.001
0
-0.2
25 °C
−25 °C
Common Source
VGS = 0 V
Pulse test _D
IDR
G
S
-0.4
-0.6
-0.8
-1.0
-1.2
Drain–source voltage V_DS (V)
4
2012-12-21