SSM3K324R Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

I_D – V_DS
10
VGS = 4.5 V
2.5 V
8
1.8 V
6
4
2
0
0
0.2
Common Source
Ta = 25 °C
Pulse test
0.4
0.6
0.8
1
Drain–source voltage V_DS (V)
SSM3K324R
10
Common source
VDS = 3 V
Pulse test
1
I_D – V_GS
0.1
Ta = 100 °C
0.01
0.001
−25 °C
25 °C
0.0001
0
1.0
2.0
Gate–source voltage V_GS (V)
160
140
120
100
80
60
40
20
単発
0
0
R_{DS (ON)} – V_GS
ID = 1.0 A
Common Source
Pulse test
Ta = 100 °C
25 °C
− 25 °C
2
4
6
8
10
12
Gate–source voltage V_GS (V)
160
140
120
100
80
60
40
20
単発
0
0
R_{DS (ON)} – V_GS
ID = 2.0 A
Common Source
Pulse test
Ta = 100 °C
25 °C
− 25 °C
2
4
6
8
10
12
Gate–source voltage V_GS (V)
160
140
120
100
80
60
40
20
単発
0
0
R_{DS (ON)} – I_D
1.8 V
Common Source
Ta = 25°C
Pulse test
2.5 V
VGS = 4.5 V
2
4
6
8
10
Drain current I_D (A)
3
R_{DS (ON)} – T_a
100
Common Source
Pulse test
80 _{ID = 0.5 A / VGS = 1.8 V}
1.0 A / 2.5 V
60
40
2.0 A / 4.5 V
20
0
−50
0
50
100
150
Ambient temperature T_a (°C)
2012-12-21