SSM3K324R Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

Electrical Characteristics (Ta = 25°C)
SSM3K324R
Characteristic
Symbol
Test Conditions
Min Typ. Max Unit
Drain-source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
V _{(BR) DSS} I_D = 1 mA, V_GS = 0 V
30


V
V _{(BR) DSX} I_D = 1 mA, V_GS = −12 V
(Note 5) 18


I_DSS
V_DS = 24 V, V_GS = 0 V


1
µA
I_GSS
V_GS = ± 10 V, V_DS = 0 V


±10
µA
V_th
V_DS = 3 V, I_D = 1 mA
0.4

1.0
V
Y_fs
V_DS = 3 V, I_D = 2.0 A
(Note 4)  10.5 
S
I_D = 2.0 A, V_GS = 4.5 V
(Note 4) 
45
56
R_{DS (ON)} I_D = 1.0 A, V_GS = 2.5 V
(Note 4) 
55
72
mΩ
I_D = 0.5 A, V_GS = 1.8 V
(Note 4) 
69 109
C_iss

200

C_oss
V_DS = 10 V, V_GS = 0 V, f = 1 MHz

40

pF
C_rss

13

Q_g
Q_gs1
Q_gd
V_DS = 10 V, I_D = 2.4 A
V_GS = 4.5 V

2.2


0.5

nC

0.9

t_on
V_DD = 10 V, I_D = 2.0 A,
t_off
V_GS = 0 to 2.5V, R_G = 4.7 Ω

9

ns

9.5

V_DSF
I_D = -4.0 A, V_GS = 0 V
(Note 4) 
-0.8 -1.2
V
Note 4: Pulse test.
Note 5: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the
drain-source breakdown voltage is lowered in this mode.
(a) Test Circuit
2.5 V
IN
0
10 µs
(b) V_IN
OUT
V_DD = 10 V
R_G = 4.7 Ω
Duty ≤ 1%
V_IN: t_r, t_f < 5 ns
Common Source
Ta = 25°C
(c) V_OUT
V_DD
2.5V
0V
V_DD
V_{DS (ON)}
10%
90%
90%
10%
t_r
t_f
t_on
t_off
Usage Considerations
Let V_th be the voltage applied between gate and source that causes the drain current (I_D) to below (1 mA for the
SSM3K324R). Then, for normal switching operation, V_GS(on) must be higher than V_th, and V_GS(off) must be lower than
V_th. This relationship can be expressed as: V_GS(off) < V_th < V_GS(on).
Take this into consideration when using the device.
2
2012-12-21