SSM3K12T Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category

Safe operating area
10
ID max (pulsed)
ID max (continuous)
10 ms*
1 ms*
1 ^{DC operation}
Ta = 25°C
10 s*
SSM3K12T
0.1
Mounted on FR4 board
(C2u5.P4amd:m64´_{52m5.m4 2m)m} ´ 1.6 t,
*: Single nonrepetitive Pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.1
1
VDSS max
10
Drain-Source voltage V_DS (V)
1000
100
r_th – tw
100
10
1
0.1
0.0001
0.001
Single pulse
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu Pad: 645 mm2)
0.01
0.1
1
10
Pulse width tw (s)
100
1000
5
2002-01-24