SSM3K12T Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category

Marking
3
Equivalent Circuit
3
SSM3K12T
KDJ
1
2
1
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain-Source breakdown voltage
Drain Cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Total gate charge
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Note 3 : Pulse test
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ±16 V, V_DS = 0
¾
¾
±1
mA
V _{(BR) DSS} I_D = 1 mA, V_GS = 0
30
¾
¾
V
I_DSS
V_DS = 30 V, V_GS = 0
¾
¾
1
mA
V_th
V_DS = 5 V, I_D = 0.1 mA
1.1
¾
1.8
V
|Y_fs|
V_DS = 5 V, I_D = 1.5 A
(Note 3) 1.8 3.2
¾
S
I_D = 1.5 A, V_GS = 10 V
(Note 3) ¾
78
95
R_{DS (ON)} I_D = 1.5 A, V_GS = 4.5 V
(Note 3) ¾
117 145 mW
I_D = 1.5 A, V_GS = 4.0 V
(Note 3) ¾
135 175
Qg
V_DD = 24 V, I_D = 3 A, V_GS = 4 V
¾
2.6
¾
nC
C_iss
V_DS = 15 V, V_GS = 0, f = 1 MHz
¾
120
¾
pF
C_rss
V_DS = 15 V, V_GS = 0, f = 1 MHz
¾
20
¾
pF
C_oss
V_DS = 15 V, V_GS = 0, f = 1 MHz
¾
68
¾
pF
t_r
¾
13
¾
t_on
V_DD = 15 V, I_D = 1.5 A
t_f
V_GS = 0~4 V, R_G = 10 W
¾
21
¾
ns
¾
3.6
¾
t_off
¾
16
¾
Switching Time Test Circuit
(a) Test circuit
10 ms
4V
IN
0
I_D
V_DD = 15 V
OUT _{RG = 10 W}
D.U. ^<= 1%
V_IN: t_r, t_f < 5 ns
Common source
Ta = 25°C
V_DD
4V
(b) V_IN
0
V_DD
(c) V_OUT
V_{DS (ON)}
10%
t_r
90%
10%
90%
t_f
Precaution
t_on
t_off
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for
this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires
lower voltage than Vth.
(relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device.
VGS recommended voltage of 4 V or higher to turn on this product.
2
2002-01-24