SSM3K12T Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category

2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-25
V_th – Ta
Common Source
VDS = 5 V
ID = 0.1 mA
0
25
50
75
100 125 150
Ambient temperature Ta (°C)
SSM3K12T
3
Common Source
VGS = 0
2.5 ^{Ta = 25°C}
I_DR – V_DS
2
IDR
1.5
1
0.5
0
0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1
Drain-Source voltage VDS (V)
Dynamic Input Characteristic
10
9
8
7
12 V
6
5
VDD = 24 V
4
3
2
Common Source
1
ID = 3 A
Ta = 25°C
0
0
1
2
3
4
5
6
7
Total Gate charge Qg (nC)
1000
100
tf
ton
10
tr
t – I_D
toff
Common Source
VDD = 15 V
VGS = 0~4 V
Ta = 25°C
RG = 10 W
1
0.01
0.1
1
10
Drain current ID (A)
400
350
300
250
200
150
100
50
0
0
C – V_DS
Common Source
VGS = 0
f = 1 MHz
Ta = 25°C
Ciss
Coss
Crss
5
10
15
20
25
30
Drain-Source voltage VDS (V)
1.6
1.4
t = 10 s
1.2
P_D – Ta
Mounted on FR4 board
(C2u5.P4amd:m64´_{52m5.m4 2m）}m ´ 1.6 t,
1.0
0.8 _DC
0.6
0.4
0.2
0
0
50
100
150
200
Ambient temperature Ta (°C)
4
2002-01-24