SSM3K12T Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category

SSM3K12T
CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category
SSM3K12T
DC-DC Converter
High Speed Switching Applications
Unit: mm
· Small Package
· Low ON-resistance
· High speed
: Ron = 95 mΩ (max) (@VGS = 10 V)
: Ron = 145 mΩ (max) (@VGS = 4.5 V)
: ton = 21 ns
: toff = 16 ns
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
V_DS
30
V
Gate-Source voltage
V_GSS
±20
V
Drain current
DC
I_D
3.0
A
Pulse
I_DP (Note 2)
6.0
Drain power dissipation (Ta = 25°C)
P_D (Note 1)
t = 10 s
0.7
1.25
W
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
-55~150
°C
Note 1: Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm²)
Note 2: The pulse width limited by max channel temperature.
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
1
2002-01-24