SSM3K12T Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category

I_D – V_DS
6
10 _4.5
4
Common Source
5
Ta = 25°C
4
3.6
3
VGS = 3.3 V
2
3.0
2.8
1
2.6
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain-Source voltage VDS (V)
SSM3K12T
10000
I_D – V_GS
1000
100
10
100°C
Ta = -25°C
25°C
1
0.1
0.01
0
Common Source
VDS = 5 V
0.5 1 1.5 2 2.5 3 3.5 4 4.5
Gate-Source voltage VGS (V)
300
Common Source
Ta = 25°C
250
R_{DS (ON)} –I_D
4
200
150
4.5
100
VGS = 10 V
50
0
0
1
2
3
4
5
6
Drain current ID (A)
500
450
400
350
300
250
200
150
100
50
0
0
R_{DS (ON)} – V_GS
Common Source
ID = 1.5 A
100°C
Ta = 25°C
-25°C
5
10
15
20
Gate-Source voltage VGS (V)
R_{DS (ON)} – Ta
250
Common Source
ID = 1.5 A
200
4
150
4.5
100
VGS = 10 V
50
0
-25
0
25
50
75
100 125 150
Ambient temperature Ta (°C)
10
Common Source
VDS = 5 V
Ta = 25°C
|Y_fs| – I_D
1
0.1
00.1
0.01
0.1
1
10
Drain current ID (A)
3
2002-01-24