HN4B102J Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)

Common
1000
r_th－t_w
HN4B102J
100
10
1
0.001
0.01
Curves apply only to limited areas of thermal resistance.
Single nonepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm²)
Single-device operation
0.1
1
10
100
1000
Pulse width t_w (s)
5
2009-06-17