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HN4B102J Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) | |||
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HN4B102J
TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)
HN4B102J
MOS Gate Drive Applications
Switching Applications
⢠Small footprint due to a small and thin package
⢠High DC current gain : PNP hFE = 200 to 500 (IC =ï¼0.2 A)
: NPN hFE = 200 to 500 (IC = 0.2 A)
⢠Low collector-emitter saturation : PNP VCE (sat) =ï¼0.20 V (max)
: NPN VCE (sat) = 0.14 V (max)
⢠High-speed switching : PNP tf = 40 ns (typ.)
: NPN tf = 45 ns (typ.)
ãã+0.2
2.8 -0.3
ãã+0.2
1.6 -0.1
Unit: mm
1
5
2
4
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
PNP NPN
Collector-base voltage
VCBO
â30 60
V
Collector-emitter voltage
VCEO
â30 30
V
Emitter-base voltage
VEBO
â7
7
V
Collector current
DC (Note 1)
IC
Pulse (Note 1)
ICP
â1.8 2.0
A
â8.0 8.0
Base current
IB
â0.5 0.5
A
Collector power
Single-device
dissipation (t = 10 s) operation
PC (Note 2)
1.1
W
Collector power
dissipation (DC)
Single-device
operation
PC (Note 2)
0.75
W
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
â55 to 150
°C
1. Base (Q1 PNP)
2. Emitter (Q1 PNP/Q2 NPN)
3. Base (Q2 NPN)
4. Collector (Q2 NPN)
5. Collector (Q1 PNP)
JEDEC
â
JEITA
â
TOSHIBA
2-3L1A
Weight: 0.014g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2)
Note 3:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Figure 1 Circuit Configuration (top view)
ï¼
ï¼
Figure 2 Marking
Part No.
(or abbreviation code)
5L
ï¼ï¼ï¼
Q1 Q2
(PNP) (NPN)
1
2009-06-17
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