HN4B102J Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)

Electrical Characteristics (Ta = 25°C)
PNP
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
NPN
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE (1)
h_FE (2)
h_FE (3)
V_{CE (sat)}
V_{BE (sat)}
C_ob
t_r
t_stg
t_f
V_CB = −30 V, I_E = 0
V_EB = −7 V, I_C = 0
I_C = −10 mA, I_B = 0
V_CE = −2 V, I_C = −0.2 A
V_CE = −2 V, I_C = −0.6 A
V_CE = −2 V, I_C = −2.0 A
I_C = −0.6 A, I_B = −20 mA
I_C = −0.6 A, I_B = −20 mA
V_CB = −10 V, I_E = 0, f = 1MHz
See Figure 3 circuit diagram
V_CCi≒−18 V, R_L = 30 Ω
I_B1 = I_B2 = 20 mA
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE (1)
h_FE (2)
h_FE (3)
V_{CE (sat)}
V_{BE (sat)}
C_ob
t_r
t_stg
t_f
V_CB = 60 V, I_E = 0
V_EB = 7 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 2 V, I_C = 0.2 A
V_CE = 2 V, I_C = 0.6 A
V_CE = 2 V, I_C = 2.0 A
I_C = 0.6 A, I_B = 20 mA
I_C = 0.6 A, I_B = 20 mA
V_CB = 10 V, I_E = 0, f = 1MHz
See Figure 4 circuit diagram
V_CC≒18 V, R_L = 30 Ω
I_B1 = I_B2 = 20 mA
HN4B102J
Min Typ. Max Unit
⎯
⎯ −100 nA
⎯
⎯ −100 nA
−30 ⎯
⎯
V
200
⎯
500
125 ⎯
⎯
40
⎯
⎯
⎯
⎯ −0.20 V
⎯
⎯ −1.10 V
⎯ 16.5 ⎯
pF
⎯
40
⎯
⎯
280
⎯
ns
⎯
40
⎯
Min Typ. Max Unit
⎯
⎯
100
nA
⎯
⎯
100
nA
30
⎯
⎯
V
200
⎯
500
125 ⎯
⎯
40
⎯
⎯
⎯
⎯
0.14
V
⎯
⎯
1.10
V
⎯
14
⎯
pF
⎯
45
⎯
⎯
580
⎯
ns
⎯
45
⎯
Figure 3. Switching Time Test Circuit & Timing Chart
20μs
IB2
IB1
IB1
Input
Duty cycle ＜1%
IB2
VCC
RL
Output
Figure 4. Switching Time Test Circuit & Timing Chart
20μs
IB1
IB1
IB2
Input
Duty cycle ＜1%
IB2
VCC
RL
Output
2
2009-06-17