HN4B102J Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)

PNP
-2
-1.6
-1.2
-0.8
-0.4
0
0
I_C – V_CE
-10
-20
-8
-6
-5
-4
-3
-2
IB =− 1 mA
Common emitter
Ta = 25°C
Single nonrepetitive pulse
-0.4
-0.8
-1.2
-1.6
-2
Collector−emitter voltage V_CE (V)
HN4B102J
1000
300
100
h_FE – I_C
Ta = 100°C
−55°C
25°C
30
Common emitter
VCE = −2 V
Single nonrepetitive pulse
10
-0.001
-0.01
-0.1
-1
-10
Collector current I_C (A)
V_{CE (sat)} – I_C
-1 _{Common emitter}
I_C/I_B = 30
Single nonrepetitive pulse
-0.3
-0.1
-0.03
Ta = 100°C
−55°C
25°C
-0.01
-0.001
-0.01
-0.1
-1
-10
Collector current I_C (A)
I_C – V_BE
-2 _{Common emitter}
VCE = −2 V
Single nonrepetitive
-1.6 ^pulse
-1.2
Ta = 100°C
−55°C
-0.8
-0.4
25°C
0
0
-0.4
-0.8
-1.2
-1.6
Base−emitter voltage V_BE (V)
V_{BE (sat)} – I_C
-10 _{Common emitter}
I_C/I_B = 30
Single nonrepetitive pulse
-3
-1
Ta = -55°C
25°C
100°C
-0.3
-0.1
-0.001
-0.01
-0.1
-1
-10
Collector current I_C (A)
Safe operating area
-10
IC max (pulse) *
IC max (pulse) *
100 ms*
IC max
-1 _{(continuous)*}
10 μs*
100μs*
DC operation
Ta = 25°C
10 s*
-0.1
-0.01
*: Single nonrepetitive pulse
Ta = 25°C
Note that the curves for 100 ms, 10 s and
DC operation will be different when the
devices aren’t mounted on an FR4 board
(glass-epoxy, 1.6 mm thick, Cu area: 645
mm²).
Single-device operation
These characteristic curves must be
derated linearly with increase in
temperature.
-0.1
-1
-10
Collector−emitter voltage V_CE
1 ms*
10 ms*
-100
(V)
3
2009-06-17