HN4B101J Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)

NPN
I_C – V_CE
1.2
10
8
6
5
1.0
4
0.8
3
0.6
2
0.4
IB = 1 mA
0.2
Common emitter
Ta = 25°C
Single nonrepetitive pulse
0
0
1
2
3
4
5
Collector−emitter voltage V_CE (V)
HN4B101J
1000
100
h_FE – I_C
Ta = 100°C
25°C
−55°C
Common emitter
VCE = 2 V
Single nonrepetitive pulse
10
0.001
0.01
0.1
1
10
Collector current I_C (A)
V_{CE (sat)} – I_C
1
Common emitter
β = 30
Single nonrepetitive pulse
V_{BE (sat)} – I_C
10
Common emitter
β = 30
Single nonrepetitive pulse
0.1
Ta = 100°C
−55°C
25°C
0.01
0.001
0.01
0.1
1
10
Collector current I_C (A)
1
Ta = −55°C
25°C
100°C
0.1
0.001
0.01
0.1
1
Collector current I_C (A)
1.2
Common emitter
I_C – V_BE
VCE = 2 V
1.0 _{Single nonrepetitive}
pulse
0.8
0.6
Ta = 100°C
−55°C
0.4
25°C
0.2
0
0
0.4
0.8
1.2
1.6
Base−emitter voltage V_BE (V)
Safe operating area
10
IC max (pulse) *
100 μs* 10 μs*
IC max (pulse) * 10 ms* 1 ms*
IC max (continuous)*
1
DC operation
Ta = 25°C
*: Single nonrepetitive pulse
Ta = 25°C
Note that the curves for 100 ms,
10 s and DC operation will be
0.1 different when the devices aren’t
mounted on an FR4 board
(glass-epoxy, 1.6 mm thick, Cu
area: 645 mm²).
Single-device operation
These characteristic curves must
be derated linearly with increase
100 ms*
in temperature.
10 s*
0.01
0.1
1
10
100
Collector−emitter voltage V_CE (V)
4
2006-11-13