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HN4B101J Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)
Figure 1. Circuit Configuration (top view)
5      4
Figure 2. Marking
HN4B101J
PNP
NPN
1  2    3
Electrical Characteristics (Ta = 25°C)
PNP
Part No.
(or abbreviation code)
5 K
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
NPN
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
Cob
tr
tstg
tf
VCB = −30 V, IE = 0
VEB = −7 V, IC = 0
IC = −10 mA, IB = 0
VCE = −2 V, IC = −0.12 A
VCE = −2 V, IC = −0.4 A
IC = −0.4 A, IB = −13 mA
IC = −0.4 A, IB = −13 mA
VCB = −10 V, IE = 0, f = 1MHz
See Figure 3 circuit diagram
VCC ∼− −16 V, RL = 40 Ω
−IB1 = IB2 = 13 mA
Min Typ. Max Unit
⎯
⎯ −100 nA
⎯
⎯ −100 nA
−30 ⎯
⎯
V
200
⎯
500
125 ⎯
⎯
⎯
⎯ −0.20 V
⎯
⎯ −1.10 V
⎯
7.8
⎯
pF
⎯
40
⎯
⎯
200
⎯
ns
⎯
45
⎯
Characteristic
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
Cob
tr
tstg
tf
VCB = 50 V, IE = 0
VEB = 7 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 0.12 A
VCE = 2 V, IC = 0.4 A
IC = 0.4 A, IB = 13 mA
IC = 0.4 A, IB = 13 mA
VCB = 10 V, IE = 0, f = 1MHz
See Figure 4 circuit diagram
VCC ∼− 16 V, RL = 40 Ω
IB1 = −IB2 = 13 mA
⎯
⎯
100
nA
⎯
⎯
100
nA
30
⎯
⎯
V
200
⎯
500
125 ⎯
⎯
⎯
⎯
0.17
V
⎯
⎯
1.10
V
⎯
7.0
⎯
pF
⎯
45
⎯
⎯
450
⎯
ns
⎯
50
⎯
Figure 3. Switching Time Test Circuit & Timing Chart
Figure 4. Switching Time Test Circuit & Timing Chart
20μs
IB2
IB1
Duty cycle <1%
IB1
Input
IB2
Output
VCC
20μs
IB1
IB2
Duty cycle <1%
IB1
Input
IB2
2
VCC
RL
Output
2006-11-13