HN4B101J Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)

PNP
I_C – V_CE
1.0
−20
−10
−8
0.8
0.6
−6 _−5
−4
−3
−2
0.4
IB = −1 mA
0.2
Common emitter
Ta = 25°C
Single nonrepetitive pulse
0
0
−1
−2
−3
−4
−5
Collector−emitter voltage −V_CE (V)
HN4B101J
1000
100
h_FE – I_C
Ta = 100°C
25°C
−55°C
Common emitter
VCE = −2 V
Single nonrepetitive pulse
10
0.001
0.01
0.1
1
Collector current −I_C (A)
V_{CE (sat)} – I_C
1
Common emitter
β = 30
Single nonrepetitive pulse
0.1
Ta = 100°C
−55°C
25°C
0.01
V_{BE (sat)} – I_C
10
Common emitter
β = 30
Single nonrepetitive pulse
1
Ta = −55°C
25°C
100°C
0.001
0.001
0.01
0.1
1
Collector current −I_C (A)
1.0
Common emitter
I_C – V_BE
VCE = −2 V
0.8 ^{Single nonrepetitive}
pulse
0.6
Ta = 100°C
−55°C
0.4
25°C
0.2
0
0
0.4
0.8
1.2
1.6
Base−emitter voltage −V_BE (V)
0.1
0.001
0.01
0.1
1
Collector current −I_C (A)
Safe operating area
10
IC max (pulse) *
100 μs*
IC max (pulse) *
10 ms* 1 ms*
10 μs*
IC max (continuous)*
1
DC operation
Ta = 25°C
*: Single nonrepetitive pulse
Ta = 25°C
Note that the curves for 100 ms,
0.1
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board
(glass-epoxy, 1.6 mm thick, Cu
area: 645 mm²).
Single-device operation
These characteristic curves must
be derated linearly with increase
100 ms*
in temperature.
10 s*
0.01
0.1
1
10
100
Collector−emitter voltage −V_CE (V)
3
2006-11-13