HN4B101J Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)

HN4B101J
TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)
HN4B101J
MOS Gate Drive Applications
Switching Applications
• Small footprint due to a small and thin package
• High DC current gain : h_FE = 200 to 500 (I_C = −0.12 A)
• Low collector-emitter saturation: PNP V_{CE (sat)} = −0.20 V (max)
: NPN V_{CE (sat)} = 0.17 V (max)
• High-speed switching : PNP t_f = 45 ns (typ.)
: NPN t_f = 50 ns (typ.)
　　+0.2
2.8 -0.3
　　+0.2
1.6 -0.1
Unit: mm
1
5
2
4
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
PNP NPN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC (Note 1)
Pulse (Note 1)
Base current
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
−30 50
V
−30 30
V
−7
7
V
−1.0 1.2
A
−5.0 5.0
−120 120
mA
Collector power
Single-device
dissipation (t = 10 s) operation
P_C (Note 2)
0.85
W
1. Base (PNP)
2. Emitter (PNP/NPN)
3. Base (NPN)
4. Collector (NPN)
5. Collector (PNP)
JEDEC
―
JEITA
―
TOSHIBA
2-3L1A
Weight: 0.014g (typ.)
Collector power
dissipation (DC)
Single-device
operation
P_C (Note 2)
0.55
W
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm²)
Note 3:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-13