TA1218F Datasheet, PDF (37/40 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Characteristics
R_outTV
Crosstalk
R_outTV
Mute attenuation
TA1218N/F
Select Mode
Symbol
Test
Circuit
Min.
Typ.
Max.
Unit
Test Method
R_inTV
R_inV1
R_inV2
R_inS1
R_inS2
CT6RTV

70
100

dB ^{(1) Apply a 1 kHz,}
1.0 Vp-p sine wave
CT9RTV

70
100

dB
to each input pin.
(2) Compare the
CT31RTV

70 100 
dB
output amplitude
CT13RTV

70 100 
dB
when R_inTV is
selected with
leakage
components from
CT17RTV

70 100 
dB
nonselected pins
R_inTV
M6RTV
While applying a
1 kHz, 1.0 Vp-p sine
wave to pin 6 (48),
compare the output

70 100 
dB _{amplitudes on pin 39}
(39) when mute is
turned on and turned
off to find mute
attenuation.
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