TA1218F Datasheet, PDF (30/40 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Characteristics
Y_out
Frequency response
Y_out
Crosstalk
C_out
Input dynamic range
C_out
Gain
TA1218N/F
Select Mode
V_inTV
V_inV1
V_inV2
Y/V_inS1
Y/V_inS2
Y_in
V_inTV
V_inV1
V_inV2
Y/V_inS1
Y/V_inS2
Y_in
V_inTV
V_inV1
V_inV2
Y/V_inS1
C_inS1
Y/V_inS2
C_inS2
C_in
V_inTV
V_inV1
V_inV2
Y/V_inS1
C_inS1
Y/V_inS2
C_inS2
C_in
Symbol
F7Y
F10Y
F28Y
F12Y
F16Y
F30Y
CT7Y
CT10Y
CT28Y
CT12Y
CT16Y
CT30Y
VDR7C
VDR10C
VDR28C
VDR12C
VDR14C
VDR16C
VDR18C
VDR32C
G7C
G10C
G28C
G12C
G14C
G16C
G18C
G32C
Test
Circuit
Min.

10

10

10

10

10

10

55

55

55

55

55

55

1.5

1.5

1.5

1.5

1.5

1.5

1.5

5.0

5.5

5.5

5.5

5.5

5.5

5.5

5.5
 −0.5
Typ. Max. Unit
Test Method


MHz ^{(1) Apply a 1.0 Vp-p}
sine wave to each

 MHz
input pin.
(2) In each select

 MHz
mode, measure a
frequency at which

 MHz
the output
amplitude on pin

 MHz
36 (36) is 3dB

 MHz
down from the 15
kHz applied level.
60

dB ^{(1) Apply a 3.58 MHz,}
1.0 Vp-p sine wave
60

dB
to each input pin.
(2) In each select
60

dB
mode, compare
60

dB
signal output from
the selected pin
60

dB
with leakage
components from
60

dB
nonselected pins
to find a crosstalk.
2.0

V_p-p
2.0

V_p-p
(1) Apply a 15 kHz
sine wave to each
2.0

V_p-p
input pin.
2.0

V_p-p
(2) In each select
mode, measure an
2.0

V_p-p
2.0

V_p-p
input amplitude at
which the output
waveform on pin
2.0

V_p-p
34 (34) begins to
be distorted.
5.5

V_p-p
6.0 6.5 dB
6.0
6.5
dB _{(1) Apply a 15 kHz,}
6.0 6.5 dB
1.0 Vp-p sine wave
6.0 6.5 dB
to each input pin.
(2) In each select
6.0 6.5 dB
mode, find the gain
6.0 6.5 dB
between input and
6.0 6.5 dB
output.
0
0.5 dB
2000-09-11 30/40