TA1218F Datasheet, PDF (33/40 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Characteristics
R_out1
Input dynamic range
R_out1
Gain
R_out1
Frequency response
R_out1
Crosstalk
R_out1
Mute attenuation
TA1218N/F
Select Mode
Symbol
Test
Circuit
Min.
Typ.
Max.
Unit
Test Method
R_inTV
R_inV1
R_inV2
R_inS1
R_inS2
VDR6R1

6.0
6.5

V_p-p
(1) Apply a 1 kHz sine
wave to each input
VDR9R1

6.0
6.5

V_p-p
pin.
(2) In each select
VDR31R1

6.0
6.5

V_p-p
mode, measure an
input amplitude at
VDR13R1

6.0
6.5

V_p-p
which the output
waveform on pin
VDR17R1

6.0
6.5

V_p-p
35 (35) begins to
be distorted.
R_inTV
R_inV1
R_inV2
R_inS1
R_inS2
R_inTV
R_inV1
R_inV2
R_inS1
R_inS2
R_inTV
R_inV1
R_inV2
R_inS1
R_inS2
R_inTV
R_inV1
R_inV2
R_inS1
R_inS2
G6R1
G9R1
G31R1
G13R1
G17R1
F6R1
F9R1
F31R1
F13R1
F17R1
CT6R1
CT9R1
CT31R1
CT13R1
CT17R1
M6R1
M9R1
M31R1
M13R1
M17R1
 −0.5
0
 −0.5
0
 −0.5
0
 −0.5
0
 −0.5
0
0.5 dB (1) Apply a 1 kHz,
0.5 dB
1.0 Vp-p sine wave
to each input pin.
0.5
dB _{(2) In each select}
0.5 dB
mode, find the gain
0.5 dB
between input and
output.

0.1
2.0

MHz ^{(1) Apply a 1.0 Vp-p}
sine wave to each
input pin.

0.1 2.0
 MHz (2) In each select
mode, measure a

0.1 2.0
 MHz
frequency at which
the output

0.1 2.0
 MHz
amplitude on pin
35 (35) is 3dB
down from the

0.1 2.0
 MHz
1 kHz applied
level.

70 100 
dB ^{(1) Apply a 1 kHz,}
1.0 Vp-p sine wave
to each input pin.

70 100 
dB _{(2) In each select}

70 100 
dB
mode, compare
signal output from
the selected pin

70 100 
dB
with leakage
components from

70 100 
dB
nonselected pins
to find a crosstalk.

70 100 
dB ^{(1) Apply a 1 kHz,}
1.0 Vp-p sine wave
to each input pin.

70 100 
dB _{(2) In each select}

70 100 
dB
mode, compare
the output
amplitudes on pin

70 100 
dB
35 (35) when mute
is turned on and

70 100 
dB
turned off to find
mute attenuation.
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