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| TA1218F Datasheet, PDF (23/40 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic | |||
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TA1218N/F
Maximum Ratings
Characteristics
Symbol
Rating
Unit
Supply voltage
Power dissipation
VCC
14
V
N
PDMAX
1800
mW
F (Note7)
(Note6)
1388
Operating temperature
Storage temperature
Topr
â20 to 65
°C
Tstg
â55 to 150
°C
Note6: When using the device at temperatures above Ta = 25°C, reduce the rated power dissipation by 14.4 mW at
TA1218N or 11.1 mW TA1218F per degree of centigrade. (see the diagram below.)
Note7: This device is not proof enough against a strong E-M field by CRT which may cause function errors and/or
poor characteristics. Keeping the distance from CRT to the device longer than 20 cm, or if cannot, placing
shield metal over the device, is recommended in an application.
1800
1224
14.4 mW/°C
0
0
25
65
150
Ambient temperature Ta (°C)
1388
944
11.1 mW/°C
0
0
25
65
150
Ambient temperature Ta (°C)
2000-09-11 23/40
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