TA1218F Datasheet, PDF (32/40 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Characteristics
L_out1
Input dynamic range
L_out1
Gain
L_out1
Frequency response
L_out1
Crosstalk
L_out1
Mute attenuation
TA1218N/F
Select Mode
Symbol
Test
Circuit
Min.
Typ.
Max.
Unit
Test Method
L_inTV
L_inV1
L_inV2
L_inS1
L_inS2
VDR5L1

6.0
6.5

V_p-p
(1) Apply a 1 kHz sine
wave to each input
VDR8L1

6.0
6.5

V_p-p
pin.
(2) In each select
VDR29L1

6.0 6.5

V_p-p
mode, measure an
input amplitude at
VDR11L1

6.0 6.5

V_p-p
which the output
waveform on pin
VDR15L1

6.0 6.5

V_p-p
37 (37) begins to
be distorted.
L_inTV
L_inV1
L_inV2
L_inS1
L_inS2
L_inTV
L_inV1
L_inV2
L_inS1
L_inS2
L_inTV
L_inV1
L_inV2
L_inS1
L_inS2
L_inTV
L_inV1
L_inV2
L_inS1
L_inS2
G5L1
G8L1
G29L1
G11L1
G15L1
F5L1
F8L1
F29L1
F11L1
F15L1
CT5L1
CT8L1
CT29L1
CT11L1
CT15L1
M5L1
M8L1
M29L1
M11L1
M15L1
 −0.5
0
0.5 dB (1) Apply a 1 kHz,
 −0.5
0
 −0.5
0
0.5 dB
1.0 Vp-p sine wave
to each input pin.
0.5
dB _{(2) In each select}
 −0.5
0
 −0.5
0
0.5 dB
0.5 dB
mode, find the gain
between input and
output.

0.1
2.0

MHz ^{(1) Apply a 1.0 Vp-p}
sine wave to each
input pin.

0.1 2.0

MHz _{(2) In each select}

0.1 2.0
 MHz
mode, measure a
frequency at which
the output

0.1 2.0
 MHz
amplitude on pin
37 is 3dB down

0.1 2.0
 MHz
from the 1 kHz
applied level.

70 100 
dB ^{(1) Apply a 1 kHz,}
1.0 Vp-p sine wave
to each input pin.

70 100 
dB _{(2) In each select}

70 100 
dB
mode, compare
signal output from
the selected pin

70 100 
dB
with leakage
components from

70 100 
dB
nonselected pins
to find a crosstalk.

70 100 
dB ^{(1) Apply a 1 kHz,}
1.0 Vp-p sine wave
to each input pin.

70 100 
dB _{(2) In each select}

70 100 
dB
mode, compare
the output
amplitudes on pin

70 100 
dB
37 (37) when mute
is turned on and

70 100 
dB
turned off to find
mute attenuation.
2000-09-11 32/40