I510X Datasheet, PDF (13/16 Pages) Taiwan Memory Technology – CompactFlash Memory Card

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td(WT)
tsu(IOWR)
th(IOWR)
tw(IOWR)
tsuA(IOWR)
thA(IOWR)
tsuCE(IOWR)
thCE(IOWR)
tsuREG(IOWR)
thREG(IOWR)
tdWT(IOWR)
tdrIOWR(WT)
tw(WT)
Data delay from wait rising
Data setup time for IOWR
Data hold time from IOWR
IOWR pulse width
Address setup time for IOWR
Address hold time from IOWR
Card Enable setup time for IOWR
Card Enable hold time from IOWR
REG setup time for IOWR
REG hold time from IOWR
Wait delay falling from IOWR
IOWR high from wait high
Wait width time
i510x
0
ns
60
ns
30
ns
165
ns
70
ns
20
ns
5
ns
20
ns
5
ns
0
ns
35
ns
0
ns
3000 ns
True-IDE mode I/O access read and write AC characteristics
For the definitions of parameters, please refer to CompactFlash Specification Rev. 2.1.
Symbol
Parameter
Min. Max. Unit
t0
Cycle time
120
ns
t1
Address valid to IORD/IOWR setup
25
ns
t2
IORD/IOWR
70
ns
t2
IORD/IOWR register (8bit)
70
ns
t3
IOWR data setup
20
ns
t4
IOWR data hold
10
ns
t5
IORD data setup
20
ns
t6
IORD data hold
5
ns
t6Z
IORD data tri-state
30
ns
t9
IORD/IOWR to address valid hold
10
ns
tRD
Read data valid to IORDY active, if IORDY 0
ns
initially low after tA
tA
IORDY setup time
35
ns
tB
IORDY pulse width
1250 ns
tC
IORDY assertion to release
5
ns
Read/write timing for NAND type flash
For the definition of parameters, please refer to Toshiba flash datasheet.
Release date: 12/9/2004
© 2004 iCreate Technologies Corporation
iCreate Technologies Corporation reserves the right to change the specification in any manner without notice.
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