I510X Datasheet, PDF (11/16 Pages) Taiwan Memory Technology – CompactFlash Memory Card

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V_IH55
V_IL55
V_OH55
V_OL55
High level input voltage for 5V
domain under 5V
Low level input voltage for 5V
domain under 5V
High level output voltage for 5V
domain under 5V
Low level output voltage for 5V
domain under 5V
4.0
Vcc-0.8
i510x
V
0.8
V
V
0.4
V
Power-on-reset characteristics
Symbol
V_T(POR)
V_T(BOR)
Parameter
Threshold voltage of power-on-reset
Threshold voltage for brown-out-reset
Typ. Unit
2.8
V
2.6
V
CF attribute memory read and write AC characteristics
For the definitions of parameters, please refer to CompactFlash Specification Rev. 2.1.
Symbol
Parameter
Min. Max. Unit
tcR
Read cycle time
300
Ns
ta(A)
Address access time
300 Ns
ta(CE)
Card Enable access time
300 ns
ta(OE)
Output Enable access time
150 ns
tdis(CE)
Output disable time from CE
100 ns
tdis(OE)
Output disable time from OE
100 ns
tsu(A)
Address setup time
30
ns
ten(CE)
Output enable time from CE
5
ns
ten(OE)
Output enable time from OE
5
ns
tv(A)
Data valid time from address change
0
ns
tcW
Write cycle time
250
ns
tw(WE)
Write pulse width
150
ns
trec(WE)
Write recovery time
30
ns
tsu(D-WEH)
Data setup time for WE
80
ns
th(D)
Data hold time
30
ns
Release date: 12/9/2004
© 2004 iCreate Technologies Corporation
iCreate Technologies Corporation reserves the right to change the specification in any manner without notice.
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