I510X Datasheet, PDF (12/16 Pages) Taiwan Memory Technology – CompactFlash Memory Card

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Common memory read and write AC characteristics
For the definitions of parameters, please refer to CompactFlash Specification Rev. 2.1.
Symbol
Parameter
Min. Max. Unit
ta(OE)
Output Enable access time
125 ns
tdis(OE)
Output disable time from OE
100 ns
tsu(A)
Address setup time
30
ns
th(A)
Address hold time
20
ns
tsu(CE)
Card Enable setup time
0
ns
th(CE)
Card Enable hold time
20
ns
tw(WT)
Wait width time
3000 ns
tw(WE)
Write pulse time
150
ns
tsu(D-WEH)
Data setup time for WE
80
ns
th(D)
Data hold time
30
ns
trec(WE)
Write recover time
30
ns
tv(WT-OE)
Wait delay falling from OE
35
ns
tv(D-WT)
Data setup for wait release
0
Ns
tv(WT-WE1)
Wait delay falling from WE
35
ns
tv(WT-WE2)
WE high from wait release
0
ns
I/O access read and write AC characteristics
For the definitions of parameters, please refer to CompactFlash Specification Rev. 2.1.
Symbol
Parameter
Min. Max. Unit
td(IORD)
Data delay after IORD
100 ns
th(IORD)
Data hold time following IORD
0
ns
tw(IORD)
IORD pulse width
165
ns
tsuA(IORD)
Address setup time for IORD
70
ns
thA(IORD)
Address hold time from IORD
20
ns
tsuCE(IORD) Card Enable setup time for IORD
5
ns
thCE(IORD)
Card Enable hold time from IORD
20
ns
tsuREG(IORD) REG setup time for IORD
5
ns
thREG(IORD) REG hold time from IORD
0
ns
tdfINP(IORD) INPACK delay falling from IORD
0
45
ns
tdrINP(IORD) INPACK delay rising from IORD
45
ns
tdfIO16(IORD) IOIS16 delay falling from address
35
ns
tdrIO16(IORD) IOIS16 delay rising from address
35
ns
tdWT(IORD)
Wait delay falling from IORD
35
ns
Page 10
Release date: 12/9/2004
© 2004 iCreate Technologies Corporation
iCreate Technologies Corporation reserves the right to change the specification in any manner without notice.