BQ25606 Datasheet, PDF (8/43 Pages) Texas Instruments – Standalone 3.0-A, Single Cell Battery Charger With 40V Over Voltage Protection Controller

bq25606
SLUSCK6 – MAY 2017
www.ti.com
Electrical Characteristics (continued)
V_{VAC_PRESENT} < V_VAC < V_{VAC_OV} and V_VAC > V_BAT + V_SLEEP, T_J = –40°C to 125°C and T_J = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
V_{SYS_MIN}
System regulation voltage
V_VBAT < V_{SYS_MIN = 3.5V}, charge
enabled or disabled
3.5
3.68
V
V_SYS
System regulation voltage
I_SYS = 0 A, V_VBAT > V_SYSMIN,
charge disabled
V_BAT +
50 mV
V
R_ON(RBFET)
Top reverse blocking MOSFET on-
resistance between VBUS and PMID -
Q1
-40°C≤ T_A ≤ 125°C
45
mΩ
R_ON(HSFET)
Top switching MOSFET on-resistance V_REGN = 5 V , -40°C≤ T_A ≤
between PMID and SW - Q2
125°C
62
mΩ
R_ON(LSFET)
Bottom switching MOSFET on-
V_REGN = 5 V , -40°C≤ T_A ≤
resistance between SW and GND - Q3 125°C
70
mΩ
V_FWD
BATFET forward voltage in supplement
mode
30
mV
R_ON(BAT-SYS)
SYS-BAT MOSFET on-resistance
QFN package, Measured from
BAT to SYS, V_BAT = 4.2V, T_J =
25°C
19.5
24 mΩ
R_ON(BAT-SYS)
SYS-BAT MOSFET on-resistance
QFN package, Measured from
BAT to SYS, V_BAT = 4.2V, T_J =
–40 - 125°C
19.5
30 mΩ
BATTERY CHARGER
V_BATREG
Charge voltage
V_{BATREG_ACC}
Charge voltage setting accuracy
I_{CHG_REG_RANGE} Charge current regulation range
I_{CHG_REG}
Charge current regulation
I_{CHG_REG_ACC}
I_{CHG_REG}
Charge current regulation accuracy
Charge current regulation
I_{CHG_REG}
Charge current regulation accuracy
I_{CHG_REG}
Charge current regulation
I_{CHG_REG_ACC} Charge current regulation accuracy
K_ICHG
K_{ICHG_ACC}
V_{BATLOWV_FALL}
V_{BATLOWV_RISE}
I_PRECHG
Charge current regulation setting ratio
Charge current regulation setting ratio
accuracy
Battery LOWV falling threshold
Battery LOWV rising threshold
Precharge current regulation
I_{PRECHG_ACC}
Precharge current regulation accuracy
I_PRECHG
Precharge current regulation
I_{PRECHG_ACC}
Precharge current regulation accuracy
R_VSET > 50 kΩ, –40 ≤ T_J ≤ 85°C
R_VSET < 500 Ω, –40 ≤ T_J ≤ 85°C
R_VSET = 10 kΩ, –40 ≤ T_J ≤ 85°C
V_BAT = 4.208 V or V_BAT = 4.352
V, –40 ≤ T_J ≤ 85°C
R_ICHG = 1100 Ω, V_VBAT = 3.1 V
or V_VBAT = 3.8 V
R_ICHG = 1100 Ω, V_VBAT = 3.1 V
or V_VBAT = 3.8 V
R_ICHG = 562 Ω, V_VBAT = 3.1 V or
V_VBAT = 3.8 V
R_ICHG = 562 Ω, V_BAT = 3.1 V or
V_BAT = 3.8 V
R_ICHG = 372 Ω, V_VBAT = 3.1 V or
V_VBAT = 3.8 V
R_ICHG = 372 Ω, V_VBAT = 3.1 V or
V_VBAT = 3.8 V
R_ICHG = 372 Ω, 562 Ω V_VBAT =
3.1 V or V_VBAT = 3.8 V
R_ICHG = 372Ω, 562 Ω V_VBAT =
3.1 V or V_VBAT = 3.8 V
Fast charge to precharge
Pre-charge to fast charge
R_ICHG = 1100 Ω, V_VBAT = 2.6 V,
I_PRECHG = 5% of I_CHG = 615mA
Percentage of I_CHG,R_ICHG = 1100
Ω, V_VBAT = 2.6 V, I_CHG = 615mA
R_ICHG = 562 Ω, V_VBAT = 2.6 V,
I_PRECHG = 5% of I_CHG = 1.218A
Percentage of I_CHG,R_ICHG = 562
Ω, V1330 = 2.6 V, I_CHG = 1.218A
4.187
4.330
4.378
–0.5%
0
516
-16%
1.14
-6%
1.715
-5%
639
-6%
2.67
3.0
21
3.4%
48
3.9%
4.208
4.352
4.4
615
1.218
1.813
677
2.8
3.1
4.229
V
4.374
V
4.422
V
0.5%
3000 mA
715 mA
16%
1.28
A
6%
1.89
A
5%
715 A×Ω
6%
2.87
V
3.24
V
38 mA
6.2%
67 mA
5.5%
8
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