BQ25606 Datasheet, PDF (11/43 Pages) Texas Instruments – Standalone 3.0-A, Single Cell Battery Charger With 40V Over Voltage Protection Controller

bq25606
www.ti.com
SLUSCK6 – MAY 2017
Electrical Characteristics (continued)
V_{VAC_PRESENT} < V_VAC < V_{VAC_OV} and V_VAC > V_BAT + V_SLEEP, T_J = –40°C to 125°C and T_J = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
CHARGE OVERCURRENT COMPARATOR (CYCLE-BY-CYCLE)
I_{HSFET_OCP}
HSFET cycle-by-cycle over-current
threshold
5.2
8.0
A
I_{BATFET_OCP}
PWM
System over load threshold
6.0
A
f_SW
PWM switching frequency
D_MAX
Maximum PWM duty cycle⁽¹⁾
BOOST MODE OPERATION
Oscillator frequency, buck mode
Oscillator frequency, boost mode
1320
1170
1500
1412
97%
1680 kHz
1500 kHz
V_{OTG_REG}
V_{OTG_REG_ACC}
V_{BATLOWV_OTG}
I_OTG
V_{OTG_OVP}
REGN LDO
Boost mode regulation voltage
V_VBAT = 3.8 V, I_(PMID) = 0 A
Boost mode regulation voltage accuracy V_VBAT = 3.8 V, I_(PMID) = 0 A
Battery voltage exiting boost mode
V_VBAT falling
Battery voltage entering boost mode
V_VBAT rising
OTG mode output current limit
OTG overvoltage threshold
Rising threshold
4.972
-3
2.6
2.9
1.2
5.55
5.126
2.8
3.0
1.4
5.8
5.280
V
3
%
2.9
V
3.15
V
1.6
A
6.15
V
V_REGN
REGN LDO output voltage
V_VBUS = 9 V, I_REGN = 40 mA
V_REGN
REGN LDO output voltage
V_VBUS = 5 V, I_REGN = 20 mA
LOGIC I/O PIN CHARACTERISTICS (CE, PSEL, SCL, SDA,, INT)
5.6
6
6.65
V
4.6
4.7
4.9
V
V_ILO
Input low threshold CE
V_IH
Input high threshold CE
I_BIAS
High-level leakage current CE
V_ILO
Input low threshold OTG
V_IH
Input high threshold OTG
I_BIAS
High-level leakage current OTG
LOGIC I/O PIN CHARACTERISTICS (PG, STAT)
Pull up rail 1.8 V
Pull up rail 1.8 V
0.4
V
1.3
V
1 µA
0.4
V
1.3
V
1 µA
V_OL
Low-level output voltage
D+/D– DETECTION
0.4
V
V_{D+_1P2}
D+ Threshold for Non-standard adapter
(combined V1P2_VTH_LO and
V1P2_VTH_HI)
1.05
1.35
V
I_{D+_LKG}
V_{D–_600MVSRC}
I_{D–_100UAISNK}
R_{D–_19K}
V_{D–_0P325}
Leakage current into D+
Voltage source (600 mV)
D– current sink (100 µA)
D– resistor to ground (19 kΩ)
D– comparator threshold for primary
detection
HiZ
V_D– = 500 mV,
V_D– = 500 mV,
D– pin Rising
-1
500
600
50
100
14.25
250
1 µA
700 mV
150 µA
24.8 kΩ
400 mV
V_{D–_2P8}
D– Threshold for non-standard adapter
(combined V2P8_VTH_LO and
V2P8_VTH_HI)
2.55
2.85
V
V_{D–_2P0}
D– Comparator threshold for non-
standard adapter (For non-standard –
same as bq2589x)
1.85
2.15
V
V_{D–_1P2}
D– Threshold for non-standard adapter
(combined V1P2_VTH_LO and
V1P2_VTH_HI)
1.05
1.35
V
I_{D–_LKG}
Leakage current into D–
HiZ
-1
1 µA
(1) Specified by design. Not production tested.
Copyright © 2017, Texas Instruments Incorporated
Product Folder Links: bq25606
Submit Documentation Feedback
11