SN74CBTU4411_16 Datasheet, PDF (7/21 Pages) Texas Instruments – Multiplexer/Demultiplexer

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SN74CBTU4411
SCDS192A – APRIL 2005 – REVISED FEBRUARY 2016
6.4 Thermal Information
THERMAL METRIC⁽¹⁾
SN74CBTU4411
ZST (NFBGA)
UNIT
72 PINS
R_θJA
R_θJC(top)
R_θJB
ψ_JT
ψ_JB
R_θJC(bot)
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
97
°C/W
34.4
°C/W
67.2
°C/W
2
°C/W
69.1
°C/W
—
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.5 Electrical Characteristics
Minimum and maximum limits apply for T_A = 0°C to 85°C (unless otherwise noted). Typical limits apply for V_DD = 1.8 V and
T_A = 25°C (unless otherwise noted).⁽¹⁾
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
V_IK ⁽²⁾
Control inputs⁽³⁾ V_DD = 1.7 V, I_IN = –18 mA
–1.8 V
V_{BIAS_DQS} D10
V_DD = 1.7 V, DQS_EN = V_DD
1.1
1.275 V
V_OH
I_IN
I_OZ ⁽⁴⁾
D10
Control inputs⁽³⁾
V_DD = 1.7 V, DQS_EN = V_DD, EN = V_DD, I_O = 100 µA
V_DD = 1.9 V, V_IN = V_DD or GND
V_DD = 1.9 V, V_O = 0 to 1.9 V, V_I = 0, Switch OFF, V_BIAS open
1.6
1.8 V
±1 µA
±10 µA
I_CC
V_DD = 1.9 V, TC = GND, EN = GND, I_I/O = 0, S0 or S1 input
switching at 50% duty cycles, Data I/O are open
0.7
2.5 mA
EN = V_DD
500 µA
I_CCD
V_DD = 1.9 V, TC = GND, EN = GND, I_I/O = 0, S0 or S1 input
switching at 50% duty cycle, Data I/O are open
0.5
mA/
MHz ⁽⁵⁾
S port
V_DD = 1.9 V, TC = GND, EN = GND, V_IN = V_REF ± 250 mV
C_in
EN, TC,
DQS_EN inputs
V_DD = 1.9 V, V_IN = 0 or 1.9 V
2.5
3.5
pF
2.5
C_io(OFF)
C_io(ON)
r_on ⁽⁶⁾
Δr_on(flat) ⁽⁷⁾
r_term
r_pulldown
r_pullup
H port
S port
D0–D10
D10
D10
V_I/O = 0.5 × V_DD ± 0.4 V, Switch OFF, V_BIAS open
V_I/O = 0.5 × V_DD ± 0.4 V, Switch ON, V_BIAS = GND
V_DD = 1.7 V, V_I = 0.5 × V_DD ± 0.5 V, I_O = 10 mA
V_DD = 1.7 V, DQS_EN = V_DD,
I_O = 10 mA
V_I = 0.5 V_DD ± 0.25 V
V_I = 0.5 V_DD ± 0.5 V
V_DD = 1.7 V
V_DD = 1.7 V
DQS_EN = GND
DQS_EN = V_DD, EN = GND
V_DD = 1.7 V, DQS_EN = V_DD, EN = GND
6
110
280
1600
700
10
1.5
2.5
160
400
2300
1000
2.5 pF
4.6 pF
17 Ω
3
Ω
5
210 Ω
520
Ω
3000
1300 Ω
(1) V_IN and I_IN refer to control inputs. V_I, V_O, I_I, and I_O refer to data pins.
(2) V_IK refers to the clamp voltage due to the internal diode, which is connected from each control input to GND.
(3) For the leakage current test on S0 and S1, EN and TC inputs are set to low.
(4) For I/O ports, the parameter I_OZ includes the input leakage current. I_OZ applies only to the H port.
(5) This frequency of S0 and S1 inputs, for example, for a data I/O rate of 533 Mbit/s, with a burst of 4, the required frequency is for S0 or
S1 input is ≅ 66 MHz (533/8). The total I_CC due to switching S0, S1 will be approximately 27 mA (66 MHz × 0.4 mA/MHz).
(6) Measured by the voltage drop between the D and H pins at the indicated current through the switch. ON-state resistance is determined
by the lower of the voltages of the two (D or H) pins.
(7) Δr_on(flat) is the difference of maximum r_on and minimum r_on for a specific channel in a specific device.
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