SN74CBTU4411_16 Datasheet, PDF (1/21 Pages) Texas Instruments – Multiplexer/Demultiplexer

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SN74CBTU4411
SCDS192A – APRIL 2005 – REVISED FEBRUARY 2016
SN74CBTU4411 11-Bit 1-of-4 Multiplexer/Demultiplexer
1.8-V DDR-II Switch With Charge Pump and Precharged Outputs
1 Features
•1 Supports SSTL_18 Signaling Levels
• Suitable for DDR-II Applications
• D-Port Outputs are Precharged by Bias Voltage
(V_BIAS)
• Internal Termination for Control Inputs
• High Bandwidth (400 MHz Minimum)
• Low and Flat ON-State Resistance (r_on)
Characteristics, (r_on = 17 Ω Maximum)
• Internal 400-Ω Pulldown Resistors
• Low Differential and Rising or Falling Edge Skew
• Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
2 Applications
• ATCA Solutions
• Automated External Defibrillators
• Adaptive Lighting
• Blood Gas Analyzers: Portable
• Bluetooth Headsets
• CT Scanners
• Cameras: Surveillance Analog
• Chemical and Gas Sensors
• DLP 3D Machine Vision and Optical Networking
3 Description
The SN74CBTU4411 device is a high-bandwidth,
SSTL_18 compatible FET multiplexer/demultiplexer
with low ON-state resistance (r_on). The device uses
an internal charge pump to elevate the gate voltage
of the pass transistor, providing a low and flat r_on. The
low and flat r_on allows for minimal propagation delay
and supports rail-to-rail signaling on data input/output
(I/O) ports. The device also features very low data I/O
capacitance to minimize capacitive loading and signal
distortion on the data bus. Matched r_on and I/O
capacitance among channels results in extremely low
differential and rising or falling edge skew. This
allows the device to show optimal performance in
DDR-II applications.
Device Information⁽¹⁾
PART NUMBER
PACKAGE
BODY SIZE
SN74CBTU4411ZST NFBGA (72)
7.00 mm × 7.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic, Each FET Switch (SW1)
Simplified Schematic, Each FET Switch (SW2)
H
(see Note A)
V_DD
Charge
Pump
D
(see Note B)
r₃
(see Note C)
M3
EN
(see Note D)
V_BIAS
A. Applicable for ports H0 through H9
B. Applicable for ports D0 through D9
C. r₃ + r_on (M3) = 400 Ω typical.
D. EN is the internal enable signal applied to
the switch.
H10
VDD
Charge
Pump
VDD
EN_DQS1
(see Note A)
M4
(see Note B)
r4
(see Note B)
VBIAS_DQS
D10
r5
(see
Note C)
M5
M6
(see
Note D)
r6 (see Note D)
EN_DQS2
(see Note A)
EN1
(see Note A)
EN2
(see Note A)
VBIAS
A. EN_DQS1, EN_DQS2, EN1, and EN2 are
the internal enable signals applied to the
switch.
B. r₄ + r_on (M4) = 1 kΩ typical.
C. r₅ + r_on (M5) = 400 Ω typical.
D. r₆ + r_on (M6) = 2.3 kΩ typical.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.