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DRV5013_16 Datasheet, PDF (5/28 Pages) Texas Instruments – Digital-Latch Hall Effect Sensor
www.ti.com
DRV5013
SLIS150E – MARCH 2014 – REVISED FEBRUARY 2016
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
Power supply voltage
Output pin voltage
VCC
Voltage ramp rate (VCC), VCC < 5 V
Voltage ramp rate (VCC), VCC > 5 V
Output pin reverse current during reverse supply condition
Magnetic flux density, BMAX
Operating junction temperature, TJ
Storage temperature, Tstg
MIN
–22 (2)
MAX
40
Unlimited
0
2
–0.5
40
0
100
Unlimited
–40
150
–65
150
UNIT
V
V/µs
V
mA
°C
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Ensured by design. Only tested to –20 V.
6.2 ESD Ratings
V(ESD)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2)
VALUE
±2500
±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
UNIT
V
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
VCC
VO
ISINK
TA
Power supply voltage
Output pin voltage (OUT)
Output pin current sink (OUT)(1)
Operating ambient temperature
(1) Power dissipation and thermal limits must be observed
MIN
MAX UNIT
2.5
38
V
0
38
V
0
30 mA
–40
125
°C
6.4 Thermal Information
THERMAL METRIC(1)
DRV5013
DBZ (SOT-23)
LPG (TO-92)
UNIT
3 PINS
3 PINS
RθJA
RθJC(top)
RθJB
ψJT
ψJB
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
333.2
99.9
66.9
4.9
65.2
180
98.6
154.9
40
154.9
°C/W
°C/W
°C/W
°C/W
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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