DRV5013_16 Datasheet, PDF (16/28 Pages) Texas Instruments – Digital-Latch Hall Effect Sensor

DRV5013
SLIS150E – MARCH 2014 – REVISED FEBRUARY 2016
8 Application and Implementation
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NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The DRV5013 device is used in magnetic-field sensing applications.
8.2 Typical Applications
8.2.1 Standard Circuit
C2
680 pF
(Optional)
OUT
2
3
R1
10 kŸ V_CC
1 ^VCC
C1
0.01 µF
(minimum)
Figure 18. Typical Application Circuit
8.2.1.1 Design Requirements
For this design example, use the parameters listed in Table 2 as the input parameters.
DESIGN PARAMETER
Supply voltage
System bandwidth
8.2.1.2 Detailed Design Procedure
Table 2. Design Parameters
REFERENCE
V_CC
ƒ_BW
EXAMPLE VALUE
3.2 to 3.4 V
10 kHz
Table 3. External Components
COMPONENT
C1
C2
R1
PIN 1
V_CC
OUT
OUT
PIN 2
GND
GND
REF ⁽¹⁾
RECOMMENDED
A 0.01-µF (minimum) ceramic capacitor rated for V_CC
Optional: Place a ceramic capacitor to GND
Requires a resistor pullup
(1) REF is not a pin on the DRV5013 device, but a REF supply-voltage pullup is required for the OUT pin; the OUT pin may be pulled up to
V_CC.
16
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