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MSP430F5529_17 Datasheet, PDF (49/128 Pages) Texas Instruments – Mixed-Signal Microcontrollers
www.ti.com
MSP430F5529, MSP430F5528, MSP430F5527, MSP430F5526
MSP430F5525, MSP430F5524, MSP430F5522, MSP430F5521
MSP430F5519, MSP430F5517, MSP430F5515, MSP430F5514, MSP430F5513
SLAS590M – MARCH 2009 – REVISED NOVEMBER 2015
5.48 Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST
CONDITIONS
MIN TYP MAX UNIT
DVCC(PGM,ERASE)
IPGM
IERASE
IMERASE, IBANK
Program and erase supply voltage
Average supply current from DVCC during program(1)
Average supply current from DVCC during erase(1)
Average supply current from DVCC during mass erase or bank
erase (1)
tCPT
Cumulative program time
Program and erase endurance
See (2)
1.8
3.6 V
3
5 mA
6
11 mA
6
11 mA
104
105
16 ms
cycles
tRetention
tWord
tBlock, 0
Data retention duration
Word or byte program time
Block program time for first byte or word
TJ = 25°C
100
See (3)
64
See (3)
49
tBlock, 1–(N–1)
Block program time for each additional byte or word, except for last
byte or word
See (3)
37
tBlock, N
Block program time for last byte or word
See (3)
55
tErase
Erase time for segment, mass erase, and bank erase when
available.
See (3)
23
years
85 µs
65 µs
49 µs
73 µs
32 ms
fMCLK,MRG
MCLK frequency in marginal read mode
(FCTL4.MRG0 = 1 or FCTL4.MRG1 = 1)
0
1 MHz
(1) Default clock system frequency of MCLK = 1 MHz, ACLK = 32768 Hz, SMCLK = 1 MHz. No peripherals are enabled or active.
(2) The cumulative program time must not be exceeded when writing to a 128-byte flash block. This parameter applies to all programming
methods: individual word- or byte-write and block-write modes.
(3) These values are hardwired into the state machine of the flash controller.
5.49 JTAG and Spy-Bi-Wire Interface
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST
CONDITIONS
MIN TYP
fSBW
tSBW,Low
tSBW, En
Spy-Bi-Wire input frequency
Spy-Bi-Wire low clock pulse duration
Spy-Bi-Wire enable time (TEST high to acceptance of first clock
edge) (1)
2.2 V, 3 V
2.2 V, 3 V
2.2 V, 3 V
0
0.025
tSBW,Rst
fTCK
Spy-Bi-Wire return to normal operation time
TCK input frequency, 4-wire JTAG(2)
15
2.2 V
0
3V
0
Rinternal
Internal pulldown resistance on TEST
2.2 V, 3 V
45
60
MAX UNIT
20 MHz
15 µs
1 µs
100 µs
5
MHz
10
80 kΩ
(1) Tools that access the Spy-Bi-Wire interface must wait for the tSBW,En time after pulling the TEST/SBWTCK pin high before applying the
first SBWTCK clock edge.
(2) fTCK may be restricted to meet the timing requirements of the module selected.
Copyright © 2009–2015, Texas Instruments Incorporated
Specifications
49
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