THS3202_16 Datasheet, PDF (4/37 Pages) Texas Instruments – 2-GHz, LOW DISTORTION, DUAL CURRENT-FEEDBACK AMPLIFIERS

THS3202
SLOS242F – SEPTEMBER 2002 – REVISED JANUARY 2010
ELECTRICAL CHARACTERISTICS: V_S = ±5 V
V_S = ±5 V: R_F = 500 Ω, R_L = 100 Ω, and G = +2, unless otherwise noted.
PARAMETER
AC PERFORMANCE
Small-signal bandwidth, –3 dB
(V_O = 100 mV_PP)
Bandwidth for 0.1-dB flatness
Large-signal bandwidth
Slew rate (25% to 75% level)
Rise and fall time
Settling time to 0.1%
Settling time to 0.01%
Harmonic distortion
2nd harmonic
3rd harmonic
3rd-order intermodulation distortion
Input voltage noise
Input current noise (noninverting)
Input current noise (inverting)
Crosstalk
Differential gain (NTSC, PAL)
Differential phase (NTSC, PAL)
DC PERFORMANCE
Open-loop transimpedance gain
Input offset voltage
Average offset voltage drift
Input bias current (inverting)
Average bias current drift (–)
Input bias current (noninverting)
Average bias current drift (+)
TEST CONDITIONS
G = +1, R_F = 500 Ω
G = +2, R_F = 402 Ω
G = +5, R_F = 300 Ω
G = +10, R_F = 200 Ω
G = +2, V_O = 100 mV_PP, R_F = 536 Ω
G = +2, V_O = 4 V_PP,R_F = 536 Ω
G = –1, 5-V step
G = +2, 5-V step
G = +2, V_O = 5-V step
G = –2, V_O = 2-V step
G = –2, V_O = 2-V step
G = +2, f = 16 MHz, V_O = 2 V_PP
R_L = 100 Ω
R_L = 500 Ω
R_L = 100 Ω
R_L = 500 Ω
G = +5, f_C = 120 MHz, Δf = 200 kHz,
V_O(envelope) = 2 V_PP
f > 10 MHz
f > 10 MHz
f > 10 MHz
G = +2, f = 100 MHz
G = +2, R_L = 150 Ω
G = +2, R_L = 150 Ω
V_O = ±1 V, R_L = 1 kΩ
V_CM = 0 V
V_CM = 0 V
V_CM = 0 V
V_CM = 0 V
V_CM = 0 V
V_CM = 0 V
TYP
+25°C
1800
975
780
550
380
875
5100
4400
0.45
19
118
–64
–67
–67
–69
–64
1.65
13.4
20
–60
0.008
0.03
300
±0.7
±13
±14
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THS3202
OVER TEMPERATURE
+25°C
0°C to –40°C to
+70°C +85°C
UNIT
MIN/TYP/
MAX
MHz
Typ
MHz
Typ
MHz
Typ
MHz
Typ
MHz
Typ
MHz
Typ
V/µs
Typ
V/µs
Typ
ns
Typ
ns
Typ
ns
Typ
dBc
Typ
dBc
Typ
dBc
Typ
dBc
Typ
dBc
Typ
nV/√Hz
Typ
pA/√Hz
Typ
pA/√Hz
Typ
dB
Typ
%
Typ
Degrees
Typ
200
140
120
kΩ
Min
±3
±3.8
±4
mV
Max
±10
±13
µV/°C
Typ
±60
±80
±85
µA
Max
±300
±400
nA/°C
Typ
±35
±45
±50
µA
Max
±300
±400
nA/°C
Typ
4
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