THS3202_16 Datasheet, PDF (2/37 Pages) Texas Instruments – 2-GHz, LOW DISTORTION, DUAL CURRENT-FEEDBACK AMPLIFIERS

THS3202
SLOS242F – SEPTEMBER 2002 – REVISED JANUARY 2010
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
NUMBER OF
CHANNELS
2
PACKAGE/ORDERING INFORMATION⁽¹⁾
PLASTIC SOIC-8⁽²⁾
(D)
ORDERABLE PACKAGE AND NUMBER
PLASTIC MSOP-8⁽²⁾ PowerPAD
PLASTIC MSOP-8⁽²⁾
(DGN)
MARKING
(DGK)
MARKING
THS3202D
THS3202DGN
BEP
THS3202DGK
BEV
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2) This package is available taped and reeled. To order this packaging option, add an R suffix to the part number (that is, THS3202DR).
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Over operating free-air temperature range, unless otherwise noted.
Supply voltage, V_S
Input voltage, V_I
Differential input voltage, V_ID
Output current, I_O(2)
Continuous power dissipation
Maximum junction temperature, T_J(3)
Maximum junction temperature, continuous operation, long-term reliability, T_J(4)
Operating free-air temperature range, T_A
Storage temperature range, T_STG
HBM
ESD ratings: CDM
MM
UNIT
16.5 V
±V_S
±3 V
175 mA
See Package Dissipation Ratings Table
+150°C
+125°C
–40°C to +85°C
–65°C to +150°C
3000 V
1500 V
200 V
(1) The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(2) The THS3202 may incorporate a PowerPAD on the underside of the chip. This acts as a heat sink and must be connected to a
thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature
which could permanently damage the device. See TI technical briefs SLMA002 and SLMA004 for more information about using the
PowerPAD thermally-enhanced package.
(3) The absolute maximum temperature under any condition is limited by the constraints of the silicon process.
(4) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
2
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