BQ24273 Datasheet, PDF (4/27 Pages) Texas Instruments – 2.5A, Single Input, Single Cell Switchmode Li-Ion Battery Charger with Integrated Current Sense

bq24273
SLUSB08 – JUNE 2012
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
Circuit of Figure 1, V_UVLO < V_IN < V_OVP AND V_IN>V_BAT+V_SLP, T_J = 0°C – 125°C and T_J = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNITS
Deglitch time for supply rising above
VSLP+VSLP_EXIT
Rising voltage, 2-mV over drive, t_RISE=100ns
30
ms
V_OVP
V_BOVP
V_BATUVLO
V_{BAT_SOURCE}
Input supply OVP threshold voltage
Battery OVP threshold voltage
V_BOVP hysteresis
Battery UVLO threshold voltage
Bad source detection threshold
IN, V_IN Rising, 100 mV hysteresis
V_BAT threshold over V_OREG to turn off charger during charge
Lower limit for V_BAT falling from above V_BOVP
10.3
1.025 ×
V_BATREG
10.5
1.05 ×
V_BATREG
1
2.5
V_{IN_DPM} –
80mV
10.7
1.075 ×
V_BATREG
V
V
% of
V_BATREG
V
V
Bad source detection deglitch
32
ms
I_LIMIT
T_SHUTDWN
T_REG
Cycle by cycle current limit
Thermal shutdown
Thermal regulation threshold
Safety timer accuracy
10°C Hysteresis
4.1
–20%
4.9
5.6
A
165
C
120
C
20%
STAT, INT
I_IH
High-level leakage current
V_OL
Low-level output saturation voltage
PWM CONVERTER
V_/CHG = V_/PG = 5 V
IO = 10 mA, sink current
1
µA
0.4
V
Internal top reverse blocking MOSFET on-resistance
Internal top N-channel Switching MOSFET on-
resistance
I_{IN_LIMIT} = 1.5 A, Measured from _VIN to PMIDU
Measured from PMID to SW
45
80
mΩ
65
110
mΩ
Internal bottom N-channel MOSFET on-resistance
Measured from SW to PGND
65
115
mΩ
f_OSC
Oscillator frequency
D_MAX
Maximum duty cycle
D_MIN
Minimum duty cycle
BATTERY-PACK NTC MONITOR
1.35
1.50
1.65 MHz
95%
0
V_HOT
V_WARM
V_COOL
V_COLD
V_TSOFF
t_DGL(TS)
V_IH
V_IL
V_OL
I_IH
t_WATCHDOG
High temperature threshold
Low temperature threshold
TS Disable threshold
Deglitch time on TS change
Input high threshold
Input low threshold
Output low threshold
Input high leakage current
Watchdog timer timeout
V_TS falling, 1%V_DRV Hysteresis
V_TS rising, 1%V_DRV Hysteresis
V_TS rising, 2%V_DRV Hysteresis
V_PULLUP = 1.8 V, SDA and SCL
V_PULLUP = 1.8 V, SDA and SCL
I_SDA = 10 mA, sink current
V_PULLUP = 1.8 V, SDA and SCL
29.7
30
30.5 %VDRV
37.9
38.3
39.6 %VDRV
56.0
56.5
56.9 %VDRV
59.5
60
60.4 %VDRV
70
73 %VDRV
50
ms
1.3
V
0.4
V
0.4
V
1
µA
30
s
4
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