BQ24273 Datasheet, PDF (3/27 Pages) Texas Instruments – 2.5A, Single Input, Single Cell Switchmode Li-Ion Battery Charger with Integrated Current Sense

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bq24273
SLUSB08 – JUNE 2012
RECOMMENDED OPERATING CONDITIONS
IN voltage range
V_IN
IN operating range
MIN MAX UNITS
4.2
18 ⁽¹⁾ V
4.2
10
I_IN
Input current IN input
I_BAT
Charging
T_J
Operating junction temperature range
2.5 A
2.5 A
0
125 °C
(1) The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the BOOT or SW pins. A tight
layout minimizes switching noise.
ELECTRICAL CHARACTERISTICS
Circuit of Figure 1, V_UVLO < V_IN < V_OVP AND V_IN>V_BAT+V_SLP, T_J = 0°C – 125°C and T_J = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNITS
I_IN
Input quiescent current
V_UVLO < V_IN < V_OVP AND V_IN > V_BAT+V_SLP,
PWM switching
V_UVLO < V_IN < V_OVP AND V_IN > V_BAT+V_SLP,
PWM NOT switching
15
mA
5
I_BATLEAK
I_{BAT_HIZ}
Leakage current from BAT to the supply
Battery discharge current in high impedance mode,
(BAT, SW)
0°C< T_J < 85°C, High-Z Mode
0°C< T_J < 85°C, V_BAT = 4.2V, V_IN = 0V
0°C< T_J < 85°C, V_BAT = 4.2 V, V_IN = 0 V or 5 V, High-Z
mode
175
μA
5
μA
55
μA
BATTERY CHARGER
R_ON(BAT-CS+)
Internal battery charger MOSFET on-resistance
Measured from BAT to CS+,
V_BAT = 4.2V
YFF pkg
RGE pkg
37
57
mΩ
50
70
Battery regulation voltage
3.5
4.44
V
V_BATREG
Battery regulation voltage accuracy
T_A = 25°C
Over temperature
–0.5%
–1%
0.5%
1%
I_CHARGE
Charge current programmable range
Fast charge current accuracy
V_BATSHRT < V_BAT < V_BATREG
0°C to 125°C
550
–10%
2500
mA
10%
V_BATSHRT
I_BATSHRT
t_DGL(BATSHRT)
I_TERM
t_DGL(TERM)
V_RCH
t_DGL(RCH)
V_DETECT
Battery short threshold
Battery short current
Deglitch time for battery short to fast charge transition
Termination charge current accuracy
Deglitch time for charge termination
Recharge threshold voltage
Deglitch time
Battery detection voltage threshold
V_BAT Rising, 100 mV Hysteresis
V_BAT < V_BATSHRT
I_CHARGE = 50 mA
I_CHARGE > 50 mA
Both rising and falling, 2-mV over-drive,
t_RISE, t_FALL = 100 ns
Below V_BATREG
V_BAT falling below V_RCH, t_FALL = 100ns
During battery detection source cycle
During battery detection sink cycle
2.9
–35%
–15%
3.0
50.0
32
32
120
32
3.3
3.0
3.1
V
mA
ms
35%
15%
ms
mV
ms
V
I_DETECT
Battery detection current before charge done (sink
current)
2.5
mA
t_DETECT
Battery detection time
V_IH(CD)
CD input high logic level
V_IL(CD)
CD input low logic level
INPUT PROTECTION
250
ms
1.3
V
0.4
V
I_INLIM
V_{IN_DPM}
Input current limit
Input DPM threshold
Input DPM accuracy
VIN=5V, DC current pulled from SW
I_INLIM = 1.5 A
I_INLIM = 2.5 A
1.35
2.3
4.2
–2%
1.5
1.65
A
2.5
2.8
4.76
V
2%
V_DRV
I_DRV
V_{DO_DRV}
V_UVLO
V_SLP
V_{SLP_EXIT}
Internal bias regulator voltage
DRV Output current
DRV Dropout voltage (V_IN – V_DRV)
IC active threshold voltage
Sleep-mode entry threshold, V_IN-V_BAT
Sleep-mode exit hysteresis
I_IN = 1A, V_IN = 5V, I_DRV = 10mA
V_IN rising, 150 mV hysteresis
2.0 V ≤ V_BAT ≤ V_OREG, V_IN falling
2.0 V ≤ V_BAT ≤ V_OREG
5
5.2
5.45
V
10
mA
450
mV
3.6
3.8
4.0
V
0
40
100
mV
40
100
160
mV
Copyright © 2012, Texas Instruments Incorporated
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