AMC1200-Q1_16 Datasheet, PDF (4/30 Pages) Texas Instruments – Fully-Differential Isolation Amplifier

AMC1200-Q1
SBAS585A – SEPTEMBER 2012 – REVISED JANUARY 2016
6 Specifications
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6.1 Absolute Maximum Ratings
over operating ambient temperature range (unless otherwise noted)⁽¹⁾
Supply voltage
VDD1 to GND1 or VDD2 to GND2
Input voltage
VINP, VINN
Input current
VINP, VINN, VOUTP, VOUTN
Junction temperature, T_J
Storage temperature, T_stg
MIN
–0.5
GND1 – 0.5
–10
–40
–65
MAX
6
VDD1 + 0.5
10
150
150
UNIT
V
V
mA
°C
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute
maximum rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
V_(ESD) Electrostatic discharge
Human-body model (HBM), per AEC-Q100, Classification Level H2⁽¹⁾
Charged-device model (CDM), per AEC-Q100, Classification Level C3B⁽²⁾
VALUE
±2500
±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
UNIT
V
6.3 Recommended Operating Conditions
over operating ambient temperature range (unless otherwise noted)
VDD1
VDD2
V_VINP, V_VINN
V_IN
V_CM
T_A
High-side supply voltage
Low-side supply voltage
Absolute input voltage
Differential input voltage
Common-mode input voltage
Operating ambient temperature
V_VINP – V_VINN
(V_VINP + V_VIN) / 2
MIN
4.5
2.7
GND1 – 0.32
–250
GND1 – 0.16
–40
NOM
5
5
25
MAX
5.5
5.5
VDD1 + 0.16
250
VDD1
105
UNIT
V
V
V
mV
V
°C
6.4 Thermal Information
THERMAL METRIC⁽¹⁾
AMC1200-Q1
DUB (SOP) DWV (SOIC)
UNIT
8 PINS
8 PINS
R_θJA
R_θJC(top)
R_θJB
ψ_JT
ψ_JB
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
75.1
102.8
°C/W
61.6
49.8
°C/W
39.8
56.6
°C/W
27.2
16
°C/W
39.4
55.2
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
4
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