AMC1200-Q1_16 Datasheet, PDF (19/30 Pages) Texas Instruments – Fully-Differential Isolation Amplifier

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10 Layout
AMC1200-Q1
SBAS585A – SEPTEMBER 2012 – REVISED JANUARY 2016
10.1 Layout Guidelines
A layout recommendation showing the critical placement of the decoupling capacitors placed as close as possible to the AMC1200-Q1 and maintaining a
differential routing of the input signals is shown in Figure 37.
To maintain the isolation barrier and the high CMTI of the device, the distance between the high-side ground (GND1) and the low-side ground (GND2)
must be kept at maximum; that is, the entire area underneath the device must be kept free of any conducting materials.
10.2 Layout Example
Top View
VDD1
VDD2
To Shunt
12 W
SMD 0603
12 W
SMD 0603
330 pF
SMD
0603
0.1 µF
SMD
1206
VINP
VINN
AMC1200-Q1
VOUTP
VOUTN
0.1mF
0.1 µF
SMD
S¹M²⁰⁶D
1206
To Filter or ADC
GND1
GND2
LEGEND
Top layer; copper pour and traces
High-side area
Controller-side area
Via
Copyright © 2012–2016, Texas Instruments Incorporated
Clearance area.
Keep free of any
conductive materials.
Figure 37. Layout Recommendation
Product Folder Links: AMC1200-Q1
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