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LMH6702QML_17 Datasheet, PDF (3/17 Pages) Texas Instruments – 1.7 GHz, Ultra Low Distortion, Wideband Op Amp
LMH6702QML
www.ti.com
SNOSAQ2E – JULY 2005 – REVISED MARCH 2013
LMH6702 Electrical Characteristics DC Parameters(1)(2)
The following conditions apply, unless otherwise specified.
RL = 100Ω, VCC = ±5VDC, AV = +2 feedback resistor (RF) = 250Ω, gain resistor (RG) = 250Ω
Symbol
Parameter
Conditions
Notes
Min Max Unit
IBN
IBI
VIO
ICC
PSSR
Input Bias Current, Noninverting
Input Bias Current, Iverting
Input Offset Voltage
Supply Current, no load
Power Supply Rejection Ratio
RL = ∞
-VCC = -4.5V to -5.0V,
+VCC = +4.5V to +5.0V
-15 +15
μA
-21 +21
μA
-30 +30
μA
-34 +34
μA
-4.5 +4.5
mV
-6.0 +6.0
mV
15
mA
45
dB
Sub-
groups
1, 2
3
1, 2
3
1, 3
2
1, 2, 3
1, 2, 3
(1) The algebraic convention, whereby the most negative value is a minimum and most positive is a maximum, is used in this table.
Negative cur rent shall be defined as convential current flow out of a device terminal.
(2) Pre and Post irradiation limits are identical to those listed under the DC parameter tables above. Post irradiation testing is conducted at
room temperature, +25°C, only. Testing is performed as specified in MIL-STD-883 Test Method 1019 Condition A. The ELDRS-Free part
is also tested per Test Method 1019 Conditions D.
LMH6702 Electrical Characteristics AC Parameters (1)(2)
The following conditions apply, unless otherwise specified.
RL = 100Ω, VCC = ±5VDC, AV = +2 feedback resistor (RF) = 250Ω, gain resistor (RG) = 250Ω
Symbol
Parameter
Conditions
Notes Min Max Unit
Sub-
groups
HD3
GFPL
GFPH
GFRH
HD2
3rd Harmonic Distortion
Gain Flatness Peaking
Gain Flatness Peaking
Gain Flatness Rolloff
2nd Harmonic Distortion
2VPP at 20MHz
0.1MHz to 75MHz, VO < 0.5VPP
> 75MHz, VO < 0.5VPP
75MHz to 125MHz, VO<0.5VPP
2VPP at 20MHz
-62
dBc
4
0.4
dB
4
2.0
dB
4
0.2
dB
4
-52
dBc
4
(1) The algebraic convention, whereby the most negative value is a minimum and most positive is a maximum, is used in this table.
Negative cur rent shall be defined as convential current flow out of a device terminal.
(2) These parameters are not post irradiation tested.
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